Memory
When Micron announced plans to build two new fabs in the U.S. in 2022, the company vaguely said both would come online by the decade's end. Then, in 2023, it began to optimize its spending, which pushed production at these fabrication facilities. This week, the company outlined more precise timeframes for when its fabs in Idaho and New York will start operations: this will happen from calendar 2026 to calendar 2029. "These fab construction investments are necessary to support supply growth for the latter half of this decade," a statement by Micron in its Q3 FY2024 financial results report reads. "This Idaho fab will not contribute to meaningful bit supply until fiscal 2027 and the New York construction capex is not expected to contribute to...
Team Group’s T-Force Xtreem ARGB Memory: Up to DDR4-4800, ‘Mirror Design’
With even "extreme" clockspeed DDR4 modules bordering on being commodity hardware these days, DRAM module manufacturers are increasingly using design as one of the primary ways to attract attention...
0 by Anton Shilov on 12/9/2019
ChangXin Memory Technologies (CXMT) is Ramping up Chinese DRAM Using Qimonda IP
ChangXin Memory Technologies (CXMT), previously known as Innotron, has started production of computer memory using a 19 nm manufacturing technology. The company has a roadmap for at least two...
15 by Anton Shilov on 12/2/2019
Spotted at Supercomputing 2019: A 256 GB Gen-Z Memory Module
As a millennial, everything in the media that ‘Gen Z’ does often gets lumped into the millennial category. Thankfully there’s another type of Gen-Z in the world: the cache...
11 by Dr. Ian Cutress on 11/29/2019
GlobalFoundries and SiFive to Design HBM2E Implementation on 12LP/12LP+
GlobalFoundries and SiFive announced on Tuesday that they will be co-developing an implementation of HBM2E memory for GloFo's 12LP and 12LP+ FinFET process technologies. The IP package will enable...
13 by Anton Shilov on 11/5/2019
GIGABYTE Enhances Aorus RGB Memory with Aorus Memory Boost Capability
One of the advantages of having a highly-integrated product stack is ability to fine tune performance of your devices when they work together. On the one hand, this allows...
6 by Anton Shilov on 11/1/2019
GlobalFoundries Teams Up with Singapore University for ReRAM Project
GlobalFoundries has announced that the company has teamed up with Singapore’s Nanyang Technological University and the National Research Foundation to develop resistive random access memory (ReRAM). The next-generation memory...
6 by Anton Shilov on 10/28/2019
Samsung Launches Single-Chip uMCP Packages with LPDDR4X DRAM & UFS 3.0 Storage
Samsung has introduced a new lineup of all-in-one memory packages for smartphones that integrate both DRAM and storage. The latest generation of uMCP devices now feature up to 12...
30 by Anton Shilov on 10/24/2019
SK Hynix Develops 16 Gb DDR4 Chips for 32 GB Modules
SK Hynix announced on Monday that it has completed development of its first monolithic 16 Gb chip. This chip is to be made using its 3rd Generation 10 nm-class...
8 by Anton Shilov on 10/22/2019
Team Group Quietly Launches 32 GB DDR4 Memory Modules
Team Group has quietly added 32 GB unbuffered DDR4 memory modules to its product catalogue and plans to start sales in the near future. The modules will feature JEDEC-standard...
8 by Anton Shilov on 10/22/2019
Royal Memory: G.Skill’s 32 GB DDR4-4000 CL15 Kit for AMD & Intel
Bucking the trend of ever higher clocked DDR4 memory kits, G.Skill has introduced a new high-end memory kit that is focused on lower memory latencies. Compatible with both Intel...
14 by Anton Shilov on 10/21/2019
Corsair 16GB DDR4-5000 Vengeance LPX Memory Kit: Built for AMD Ryzen 3000 and MSI
The high-tech industry loves milestones that are round numbers, be it frequency, number of cores, transistor count or something else. It is not that extra 100 MHz – 200...
38 by Anton Shilov on 10/11/2019
G.Skill Launches 32 GB DDR4 Modules, 256 GB Kits: Up to DDR4-4000
G.Skill has now rolled out its 32 GB unbuffered DDR4 modules in dual-channel and quad-channel memory kits. The modules are offered with data transfer rates from 2666 MT/s to...
27 by Anton Shilov on 10/9/2019
Samsung Develops 12-Layer 3D TSV DRAM: Up to 24 GB HBM2
Samsung on Monday said that it had developed the industry’s first 12-layer 3D packaging for DRAM products. The technology uses through silicon vias (TSVs) to create high-capacity HBM memory...
11 by Anton Shilov on 10/7/2019
Gen-Z PHY Specification 1.1 Published: Adds PCIe 5.0, Gen-Z 50G Fabric
The Gen-Z Consortium this week released Physical Layer Specification 1.1 for Gen-Z interconnects. The new standard adds enhanced support for PCIe Gen 5 as well as Gen-Z 50G Fabric...
8 by Anton Shilov on 10/4/2019
Micron: 128-Layer 4th 3D NAND with RG Architecture Coming Soon
Micron has taped out its first 4th Generation 3D NAND memory devices with its new replacement gate (RG) architecture. The tape out confirms that the company is on track...
10 by Anton Shilov on 10/4/2019
Corsair Reveals Vengeance LPX DDR4-4866 Memory Kit
Corsair on Thursday released its fastest memory kit to date, the Vengeance LPX DDR4-4866, aimed at the most performance-hungry enthusiasts. The modules are specifically tested for compatibility AMD’s Ryzen...
12 by Anton Shilov on 9/13/2019
YMTC Starts Volume Production of 64-Layer 3D NAND
Yangtze Memory Technologies Co. (YMTC) this week said that it had started volume production of its 64-layer 3D NAND memory that uses its proprietary Xtacking architecture. The bhips were...
4 by Anton Shilov on 9/5/2019
Hot Chips 31 Analysis: In-Memory Processing by UPMEM
One of the key critical future elements about this world of compute is moving data about. Moving data requires power, to the point where calling data from memory can...
38 by Dr. Ian Cutress on 8/19/2019
Micron’s Fab 10 Expansion Completed: 96-Layer 3D NAND Production Starts in 2019
Micron this week hosted a grand opening ceremony of its Fab 10 Expansion in Singapore. The new cleanroom is not expected to increase the company’s production capacity in terms...
21 by Anton Shilov on 8/16/2019
Micron: Mass Production of 16 Gb DDR4 & LPDDR4X Chips Using 1z nm Technology
Micron announced on Thursday that it had started volume production of memory chips using its 3rd Generation 10 nm-class fabrication technology (also known as 1Z nm). The first DRAMs...
25 by Anton Shilov on 8/16/2019
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